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Research Papers

Sputtering of Graphite by Hydrogen Isotopes in the Fusion Environment: A Molecular Dynamics Simulation Study

[+] Author and Article Information
Qiang Zhao, Yang Li, Zheng Zhang

Beijing Key Laboratory of Passive Safety
Technology for Nuclear Energy,
North China Electric Power University,
Beijing 102206, China

Xiaoping Ouyang

Beijing Key Laboratory of Passive Safety
Technology for Nuclear Energy,
North China Electric Power University,
Beijing 102206, China;
Northwest Institute of Nuclear Technology,
Xi'an 710024, Shaanxi, China

Manuscript received October 31, 2017; final manuscript received May 25, 2018; published online September 10, 2018. Assoc. Editor: Dmitry Paramonov.

ASME J of Nuclear Rad Sci 4(4), 041022 (Sep 10, 2018) (4 pages) Paper No: NERS-17-1279; doi: 10.1115/1.4040495 History: Received October 31, 2017; Revised May 25, 2018

The sputtering of graphite due to the bombardment of hydrogen isotopes is crucial to successfully using graphite in the fusion environment. In this work, we use molecular dynamics to simulate the sputtering using the large-scale atomic/molecular massively parallel simulator (lammps). The calculation results show that the peak values of the sputtering yield are between 25 eV and 50 eV. When the incident energy is greater than the energy corresponding to the peak value, a lower carbon sputtering yield is obtained. The temperature that is most likely to sputter is approximately 800 K for hydrogen, deuterium, and tritium. Below the 800 K, the sputtering yields increase with temperature. By contrast, above the 800 K, the yields decrease with increasing temperature. Under the same temperature and incident energy, the sputtering rate of tritium is greater than that of deuterium, which in turn is greater than that of hydrogen. When the incident energy is 25 eV, the sputtering yield at 300 K increases below an incident angle at 30 deg and remains steady after that.

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Figures

Grahic Jump Location
Fig. 1

The carbon sputtering yield for graphite bombarded by D ions with an incident energy of 10 eV to 200 eV. The dot curve is taken from Ref. [23] using srim. The curves with circle and square symbols are our simulation results using lammps.

Grahic Jump Location
Fig. 2

The carbon sputtering yield as a function of target temperature for graphite bombarded by D of 50 eV incident energy

Grahic Jump Location
Fig. 3

The carbon sputtering yield for graphite bombarded by 10 eV to 200 eV D ions at different temperatures

Grahic Jump Location
Fig. 4

The depth of incident D ions as a function of incident energy

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Fig. 5

The carbon sputtering yield as a function of incident energy for graphite bombarded by T ions at target temperatures of 300 K to 1000 K

Grahic Jump Location
Fig. 6

The carbon sputtering yield as a function of incident energy for graphite bombarded by H, D, and T ions at 800 K

Grahic Jump Location
Fig. 7

The carbon sputtering yield as a function of incident angle for graphite bombarded by 25 eV H, D, and T ions at 300 K

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