Conjugate optical-conductive analysis is of main importance in thin film processing applications. Several studies have been carried out by making use of the one-dimensional model. In this paper the transient conjugate conductive-radiative field has been solved in the hypothesis of one-dimensionality of the optical field and of two-dimensionality of the thermal field. Results have been obtained with the matrix method for the optical field and the finite volume method for the thermal field. The results show that when the investigation is localized to the center of the spot, the one-dimensional model describes the thermal field quite well. Instead, if knowledge of the temperature is required elsewhere the two-dimensional model is needed. The investigation herein presented shows that for low-conductivity materials (aSi) the temperature peaks are placed inside the thin film for the absorption function distribution, determined by interference phenomena. For higher-diffusivity materials (cSi), both the thermal gradient components are of the same order of magnitude. The laser irradiation wavelength is 1.064 μm for aSi and 0.532 μm for cSi.

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