The ablation of crystalline silicon by ultrashort laser pulses is studied experimentally. A pump-and-probe experiment is implemented in a collinear arrangement, utilizing a time-delayed frequency-doubled probe beam for in situ reflectance measurement and ultrafast microscopy observation. Enhanced surface reflectivity in sub-picosecond time scale at the center of the irradiated spot indicates nonthermal liquid layer formation. A short-lived nonthermal liquid phase was detected at fluence of 1.5J/cm2. In addition to this observation, the reflected images for pump beam fluences ranging from 1.5 to 4.6J/cm2 provide evidence of plasma expansion above the irradiated target.

Issue Section:
Micro/Nanoscale Heat Transfer
Keywords:
silicon, elemental semiconductors, high-speed optical techniques, laser ablation, reflectivity, plasma materials processing, Crystalline Silicon, Pump-and-probe, Ultrafast Microscopy, Plasma
Topics:
Ablation (Vaporization technology), Lasers, Plasmas (Ionized gases), Probes, Pumps, Reflectance, Silicon, Fluence (Radiation measurement), Electrons, Microscopy
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