This research reports in situ creep properties of silicon microcantilevers at temperatures ranging from 25 °C to 100 °C under uniaxial compressive stress. Results reveal that in the stress range of 50–150 MPa, the strain rate of the silicon cantilever increases linearly as a function of applied stress. The strain rate (0.2–2.5 ) was comparable to literature values for bulk silicon reported in the temperature range of 1100–1300 °C at one tenth of the reported stress level. The experiments quantify the extent of the effect of surface stress on uniaxial creep strain rate by measuring surface stress values during uniaxial temperature dependent creep.
In Situ Deformation of Silicon Cantilever Under Constant Stress as a Function of Temperature
Manuscript received April 13, 2014; final manuscript received June 15, 2014; published online July 8, 2014. Assoc. Editor: Hsiao-Ying Shadow Huang.
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Gan, M., Zhang, Y., and Tomar, V. (August 19, 2014). "In Situ Deformation of Silicon Cantilever Under Constant Stress as a Function of Temperature." ASME. J. Nanotechnol. Eng. Med. May 2014; 5(2): 021004. https://doi.org/10.1115/1.4027877
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